http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201229306-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-54 |
| filingDate | 2011-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdbf9dbc2b87885e7edb5a8f172d403e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fdc61260a3bfc0f802fcf0d16d42e60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_034e63e0c5bea1534de8ac9723720a79 |
| publicationDate | 2012-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201229306-A |
| titleOfInvention | Method of manufacturing laminate by plasma CVD film-formation |
| abstract | According to a method of the present invention, a laminate film having a sufficient gas barrier property is provided. The laminate film is produced by the method of producing a laminate using a plasma CVD film forming apparatus provided with a vacuum chamber, a pair of film-forming rolls which are disposed in an opposing and parallel or nearly parallel position, and provided inside them with magnetic field generating members, and a plasma electric source which displays polarity reversal, wherein in the vacuum chamber, a first portion of a surface of a long film base material and a second portion of the surface of the base material are conveyed in a state overlaid opposingly on the rolls, a film-forming gas containing an organic silicon compound gas and oxygen gas is supplied to a film-forming space between the film-forming rolls, a magnetic field in the film-forming space is liberated from magnetic field generating member, a discharge plasma is liberated between the film-forming rolls from a plasma electric source, thereby a thin film is continuously formed, wherein the pressure of the film-forming space is 0.1 to 2.5 Pa, and the flow rate of the organic silicon compound is 85 to 230 sccm based on 0 DEG C and 1 atm, per 1 m<SP>2</SP>/min. of the areal velocity of the base material. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103805943-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023165913-A1 |
| priorityDate | 2010-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.