http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201209911-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc3e639586089fe232d0cfb27383c875
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3342
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
filingDate 2011-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0493f7e347e8d115375b370d2280e67d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_834862c892122e31a814c25049166c6d
publicationDate 2012-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201209911-A
titleOfInvention Substrate etching method and sapphire substrate manufacturing method
abstract The present invention provides a substrate etching method that could increase the etching selectivity of substrate against organic resist, and a sapphire substrate manufacturing method. One implementation form of the substrate etching method of the present invention is to etch aluminium compound substrate progress by forming hydrocarbon-containing plasma. On the other hand, the aforementioned substrate etching method is to deposit the aforementioned hydrocarbon-based reactant obtained from plasma on resist, to suppress the progress of etching of resist. Therefore, according to aforementioned substrate etching method, the etching selectivity of substrate against resist can be increased because of the etching rate can be reduced, and fine convex-concave patterns can be formed on the surface of substrate even without forming the resist thickly.
priorityDate 2010-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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