http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201202855-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2011-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c29c6f143f3656c8d7985d809448bc1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6dedb2bfd6b34c51908678e6ad554b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d59fc16c05232a51ae619b9c701f003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ace0854343ed3077799e5f0d633b11a0 |
| publicationDate | 2012-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201202855-A |
| titleOfInvention | Silicon-containing resist underlayer film forming composition containing amic acid |
| abstract | Disclosed is a lithography resist underlayer-forming composition for forming a resist underlayer that can be used as a hard mask. As the silane compound, the lithography resist underlayer-forming composition contains a hydrolyzable organosilane, a hydrolyzate thereof, or the hydrolysis condensation product thereof, wherein said silane compound includes a silane compound containing both an amide bond in the molecule and an organic group, which itself contains a carboxylate moiety, a carboxylic acid ester moiety or both. In one lithography resist underlayer-forming composition, the silane compound that contains both an amide bond and an organic group, which itself contains a carboxylate moiety, a carboxylic acid ester moiety or both, is present in a molar ratio of no greater than 5 mol% relative to the total amount of silane compound. In another lithography resist underlayer-forming composition, the silane compound that contains both an amide bond and an organic group, which itself contains a carboxylate moiety, a carboxylic acid ester moiety or both, is present in a molar ratio of between 0.5 and 4.9 mol% relative to the total amount of silane compound. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104246614-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104246614-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107966879-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107966879-A |
| priorityDate | 2010-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 718.