| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82cbc291d77c061ac9a216f86ec010a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc3e639586089fe232d0cfb27383c875 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B2005-3996 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3906
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-307 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F41-34 |
| filingDate |
2010-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b9ecee999debcfafd96c6f7d18bf8e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76fcc0d5caf6317415d8b9bcd0305ba2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a9f1ce8fd686691262599d01d476305 |
| publicationDate |
2011-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201140573-A |
| titleOfInvention |
Magnetoresistance element manufacturing method |
| abstract |
The present invention provides a magnetoresistance element manufacturing method, which can increase the selectivity to non-magnetic insulating layers to realize high accuracy etching of a strong magnetic layer. The solution is related to an embodiment of the magnetoresistance element manufacturing method of the present invention. In the method, the second strong magnetic layer 27 on the MgO layer (non-magnetic insulating layer) 26 is chemically etched by reactive ion etching (RIE) using chlorine-based gas plasma. At this time, by setting the temperature of the substrate between 100 DEG C and 250 DEG C may inhibit the etching of the MgO layer 26 and increase the etching ability to the second strong magnetic layer 27 in the meanwhile. Thus, high selection ratio to the MgO layer 26 is assured and it is possible to etch the second magnetic layer 27 at the same time. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109524539-A |
| priorityDate |
2009-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |