| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2011-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_accd4d5e65d72db9467b128a18777a33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bca93727181d96879d15f9ae7cec0e2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f1b517800ef78c3fb56e3181c72e9aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8360b9a311d524f699950d16ddc1d020 |
| publicationDate |
2011-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201134977-A |
| titleOfInvention |
Reduced pattern loading using BIS(DIETHYLAMINO)SILANE (C8H22N2Si) as silicon precursor |
| abstract |
Aspects of the disclosure pertain to methods of depositing dielectric layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS), ozone and molecular oxygen into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on pattern density while still being suitable for non-sacrificial applications. |
| priorityDate |
2010-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |