| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d380ea394238f732e0ab98fa00bad429 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2011-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_986269e69a7c25d43acd463d93a0cb2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f776a60d9467280820232879593226b1 |
| publicationDate |
2011-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201133650-A |
| titleOfInvention |
Oxide terminated trench mosfet with three or four masks |
| abstract |
An oxide termination semiconductor device may comprise a plurality of gate trenches, a gate runner, and an insulator termination trench. The gate trench are located in an active region. Each gate trench includes a conductive gate electrode. The insulator termination trench is located in a termination region that surrounds the active region. The insulator termination trench is filled with an insulator material to form an insulator termination for the semiconductor device. The device can be made using a three mask or four mask process. |
| priorityDate |
2010-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |