| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_990750f7e1af2422bfe662fafed84832 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2010-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74b9ff3c6bf3594afd34e15f9309815a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e834abe4b4b2f0b3586d7fc515511099
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b1a789f09f52424438d4442c5cf2e30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea19b61e0a64aecb5b562ab5624a533c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3dc495bdecb3a98ca808da18ceec709
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b8b85dd863d1af839e758807fb055b7 |
| publicationDate |
2011-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201131643-A |
| titleOfInvention |
High-selectivity etching system and method |
| abstract |
In a method and system for vapor etching, a material to be etched and an etch resistant material are placed into an etching chamber. Thereafter, a pressure in the etching chamber is adjusted to a desired pressure and the substrate is exposed to an etching gas and a gas that comprises oxygen. The exposure substantially selectively etches the material to be etched while substantially avoiding the etching of the etch resistant material. |
| priorityDate |
2009-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |