| abstract |
Disclosed is a composition for forming a resist underlayer film for lithography, which can be use for the formation of a resist underlayer film that can be used as a hard mask. Specifically disclosed is a composition for forming a resist underlayer film for lithography, which contains a silane compound having a sulfonamide group, wherein the silane compound having a sulfonamide group is a hydrolysable organosilane having a sulfonamide group in the molecule or a hydrolysate or a hydrolysis condensation product thereof. The composition comprises a silane compound having a sulfonamide group and a silane compound having no sulfonamide group, wherein the content of the silane compound having a sulfonamide group is less than 1 mol%, for example 0.1 to 0.95 mol%, relative to the total amount of the silane compounds. |