| abstract |
Disclosed is an indium oxide sintered body containing zirconium as an additive, wherein the ratio of the atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is within a range of 0.5-4 %, the relative density is 99.3 %, and the bulk resistivity is 0.5 m?cm or less. An indium oxide transparent conductive film, wherein transmissivity in the visible light region and infrared region is high, the film resistivity is low, and crystallization temperature can be controlled, a method for manufacturing the indium oxide transparent conductive film, and the oxide sintered body to be used for the purpose of manufacturing the transparent conductive film are disclosed. |