http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201029065-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2010-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91385b9ce56791307c5c754df59a6570 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f03c4ad3ca625767de1c696b404e13bc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21f99bee5da5090c00855806410dbaa0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4971fff44ffafd5e79a4352aaba0a373 |
| publicationDate | 2010-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201029065-A |
| titleOfInvention | Selective etching and formation of xenon difluoride |
| abstract | This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I683028-B |
| priorityDate | 2009-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 114.