| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2009-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6aa570d72ce6de75278c96d7c5a7df14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54c5af3830ea699941b673435840f9dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_614d12a0c9d4a5951bd13b04ec620a67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74118a6314db5da32dc461dd44435cd2 |
| publicationDate |
2010-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201017767-A |
| titleOfInvention |
Post oxidation annealing of low temperature thermal or plasma based oxidation |
| abstract |
Embodiments of the present invention provide methods of forming oxide layers on semiconductor substrates. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes forming an oxide layer on a substrate using an oxidation process having a first process gas at a first temperature less than about 800 degrees Celsius; and annealing the oxide layer formed on the substrate in the presence of a second process gas and at a second temperature. The oxidation process may be a plasma or thermal oxidation process performed at a temperature of about 800 degrees Celsius or below. In some embodiments, the post oxidation annealing process may be a spike or soak rapid thermal process, a laser anneal, or a flash anneal performed at a temperature of at least about 700 degrees Celsius, at least about 800 degrees Celsius, or at least about 950 degrees Celsius. |
| priorityDate |
2008-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |