Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67184 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
filingDate |
2008-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
publicationDate |
2009-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-200947525-A |
titleOfInvention |
Method for manufacturing semiconductor device |
abstract |
In order to improve the quality of a microcrystalline semiconductor film which is formed at an early stage of deposition, a microcrystalline semiconductor film near an interface with a base insulating film is formed under a deposition condition in which a deposition rate is low but the quality of a film to be formed is high; then, a microcrystalline semiconductor film is further deposited at a deposition rate which is increased stepwise or gradually. The microcrystalline semiconductor film is formed in a reaction chamber which is provided in a deposition chamber with space around the reaction chamber, by a chemical vapor deposition method. Further, a sealing gas is supplied into the space to help place the reaction chamber in an ultrahigh vacuum, whereby the concentration of an impurity in the microcrystalline semiconductor film near the interface with the base insulating film is reduced. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I562201-B |
priorityDate |
2007-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |