| abstract |
The present invention provides a substrate processing method to process a substrate including at least a process layer, an intermediate layer, and a mask layer are stacked in this order. The mask laver includes an aperture configured to expose a portion of the intermediate layer, The substrate processing method includes a material deposition step of depositing a material on a side surface of the aperture and exposing a portion of the process layer by etching the exposed portion of the intermediate layer by plasma generated from a deposit gas, and an etching step of etching the exposed portion of the process layer. |