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filingDate 2008-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2009-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200937631-A
titleOfInvention Semiconductor device and method for manufacturing semiconductor device
abstract A substrate of hexagonal SiC is prepared such that the major surface makes a minimum angle of 1 DEG or less against a face intersecting the (0001) face perpendicularly, e.g. the major surface turns to such a direction as the minimum angle against the [0001] direction perpendicular to the (0001) direction is 1 DEG or less. With such an arrangement, the breakdown voltage can be enhanced sharply as compared with a lateral semiconductor device where the major surface of the hexagonal SiC substrate is turning to a direction along the (0001) direction.
priorityDate 2008-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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