http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200930688-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_45b706e83780a8751a79e6a0928a5fe3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-383 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-661 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5436 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-573 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-575 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-577 |
| filingDate | 2008-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c61cf8b561bb77c56077267192acc32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c91c4f235d98edb3c1ed08d8fb62730 |
| publicationDate | 2009-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200930688-A |
| titleOfInvention | α type SiC-β type SiC combined reaction sintering SiC material and manufacture method and plasma chamber cathode that use it |
| abstract | Disclosed herein are a reaction-sintered SiC material amprising a combination of a-SiC and ss-SiC for use as semiconductor process parts and a preparation method thereof. The reaction-sintered SiC material is prepared by mixing carbon powder with a-SiC powder prepared by pressureless and pressure sintering to form a carbon/a-SiC mixture, and then allowing the mixture to react with molten silicon whose resistance has been controlled, at high temperature in a vacuum, thus preparing a ss-SiC material having resistance according to required electric properties. The reaction-sintered SiC material has electrical properties required in parts for semiconductor processes, along with excellent mechanical and chemical properties. The SiC material is characterized in that it is prepared in a rapid and inexpensive manner. Also disclosed is a two-part plasma chamber cathode, which is manufactured using said reaction-sintered SiC material and has a two-part structure of silicon and SiC. The two-part plasma chamber cathode has excellent electrical properties including high thermal conductivity and low resistance, and improved mechanical properties including durability and abrasion resistance. |
| priorityDate | 2007-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.