| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca748d5cbfb6d9d2f2c6013230fccd73 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate |
2007-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37775df5d9593cc1e1af000734113f07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9aa762a23dfebd68e66a18b20f9a8ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da46fa2fd886a73cff94ef8bdd7d637c |
| publicationDate |
2009-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200905867-A |
| titleOfInvention |
Deuterated film encapsulation of nonvolatile charge trap memory device |
| abstract |
A nonvolatile charge trap memory device with deuterium passivation of charge traps and method of manufacture. Deuterated gate layer, deuterated gate cap layer and deuterated spacers are employed in various combinations to encapsulate the device with deuterium sources proximate to the interfaces within the gate stack and on the surface of the gate stack where traps may be present. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10079314-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9716153-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9741803-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I629788-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10263087-B2 |
| priorityDate |
2007-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |