http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200903632-A

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filingDate 2008-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_586949c4cb1b3affac579a8410616bcb
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publicationDate 2009-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200903632-A
titleOfInvention Dry etching apparatus and dry etching method
abstract Disclosed are a dry etching apparatus and a dry etching method, each realizes high in-plane uniformity and high etching rate. Specifically disclosed is a dry etching apparatus comprising a vacuum chamber composed of an upper plasma generating chamber and a lower substrate processing chamber, a magnetic field coil arranged outside the side wall of the plasma generating chamber, an antenna coil arranged between the magnetic field coil and the outer surface of the side wall and connected to a high-frequency power supply, and an etching gas-introducing means arranged above the plasma generating chamber. In this dry etching apparatus, the side wall is made of a material having a relative dielectric constant of not less than 4.
priorityDate 2007-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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