| abstract |
A method of forming a semiconductor device (10, 20) includes forming active circuitry (14) over a semiconductor substrate (12), wherein the semiconductor substrate has a first major surface and a second major surface and the first active circuitry is formed over the first major surface of the semiconductor substrate. A via (16, 18) is formed within the first semiconductor substrate, wherein the via extends from the first active circuitry to the second major surface of the first semiconductor substrate. A dielectric layer (24) is formed over the second major surface and adjacent the first via. The dielectric layer (24) may include nitrogen and silicon and may be formed by a low pressure, low temperature, or both plasma process. |