Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d34fa1d0e297c04904926b0a787ecab1 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73267 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-351 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-19 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5389 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-18 |
filingDate |
2007-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3057a307e23e26c8cbf861da03681b6c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ec6f5a0d0c511d9e9cd8f1135615390 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c34347708364d97da378d33a7fdeaa7f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a00780a9aceae4dbc10af7a76e7e7048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_113e1a6cd80df4e26005dcd6a66157d1 |
publicationDate |
2008-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-200828546-A |
titleOfInvention |
Structure of dielectric layers in built-up layers of wafer level package |
abstract |
The present invention provides a structure of elastic dielectric layers with certain through holes adjacent to the angle of a RDL of WLP to absorb the stress. The elastic dielectric layer is made from silicone based materials with specific range of CTE, elongation rate and hardness, which can improve the mechanical reliability of the structure during temperature cycling test. The CTE difference between the RDL and the elastic dielectric material still may cause the elastic dielectric layer crack; to solve this problem, The present invention further provides a structure of dielectric layers with certain open through holes adjacent to the curve portion of a RDL of WLP which can reduce the stress accumulated at area of the dielectric layer adjacent to the RDL/dielectric layer interface to solve the crack problem of the dielectric layer. |
priorityDate |
2006-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |