| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66583
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
2007-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_621b2912540f8fca3cc01777dcbefbac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bd2c63dde2b37083a0cbe7c12f1d771
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8502f940d3674c3b3a817506ccb03309
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac403b38b142e2ce65d41a9ae257430b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a0ebc90a47fac88ecdbe610b0cd34c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e65b070717012e3ce602cb8fbcdb0fb5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea2f4c8b008f38b35cae5d7f6c399222 |
| publicationDate |
2008-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200822225-A |
| titleOfInvention |
Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure |
| abstract |
Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400 DEG C (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I800664-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10872893-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483262-B2 |
| priorityDate |
2006-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |