http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200807565-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 |
| filingDate | 2007-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8deba59ba0d6dd5b91b2aa30a85c80df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f6a1a438c9ea03175f4217a4afc152f |
| publicationDate | 2008-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200807565-A |
| titleOfInvention | Semiconductor device and method for fabricating the same |
| abstract | A semiconductor device includes a device isolation structure, a recess channel structure, and a gate electrode. The device isolation structure is formed in a semiconductor substrate to define an active region. The recess channel structure is disposed in the semiconductor substrate under the active region. The gate electrode includes a holding layer disposed in a gate region to fill the recess channel structure. The holding layer prevents a seam and a shift of the seam occurring in the recess channel structure. |
| priorityDate | 2006-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.