Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9087628e8fbdb29ed276be4b57299835 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31645 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02192 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C215-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-04 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C215-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
filingDate |
2005-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48fd04fb5425a506a7772eab5455fc24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3670a2189197d05d18fd9c6014e2625c |
publicationDate |
2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-200606132-A |
titleOfInvention |
Alkoxide compound, raw material for thin film formation and process for producing thin film |
abstract |
An alkoxide compound that is represented by the following general formula (I) and is suitable to a raw material for thin film formation for use in a process of thin film formation though compound evaporation, such as CVD process. Further, there is provided a raw material for thin film formation comprising the above alkoxide compound. Still further, there is provided a process for producing a thin film, comprising vaporizing the above raw material for thin film formation to thereby obtain a vapor containing the alkoxide compound, introducing the vapor onto a substratum, and performing decomposition and/or chemical reaction thereof to thereby form a thin film on the substratum. (I) (wherein one of R1 and R2 is a C1-C4 alkyl while the other is a hydrogen atom or C1-C4 alkyl; each of R3 and R4 is a C1-C4 alkyl; A is a C1-C8 alkanediyl; M is a silicon or hafnium atom; and n is 4). |
priorityDate |
2004-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |