http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200534405-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D04B15-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D04B15-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D04B9-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D04B15-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D04B15-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D04B15-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D04B15-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A41B11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D04B9-46
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
filingDate 2004-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7faeaabae4373ec23998a371a4e3769
publicationDate 2005-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200534405-A
titleOfInvention Method for forming isolation layer in semiconductor device
abstract The present invention relates to a method for forming an insulating layer in a semiconductor device. After a first oxide film is formed in a trench, an impurity remaining on the first oxide film in the process of etching the first oxide film using a gas containing fluorine is stripped using oxygen plasma or hydrogen plasma. Thus, it can prevent degradation of device properties due to diffusion of the impurity without additional equipment. Therefore, it can help improve reliability of a next-generation device.
priorityDate 2004-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID783
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419577462
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23940
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14917
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419569951
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5416
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559562
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419577374
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23987
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425193155
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291

Total number of triples: 46.