| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2003-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_205d3d2315549e6181c10c074f1991a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6253a16bb607c2a29cb84154a22e1a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f250279f249fe6862ab6f262cb0fd1da |
| publicationDate |
2004-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200401371-A |
| titleOfInvention |
Method for oxidizing a silicon wafer at low-temperature and apparatus for the same |
| abstract |
The present invention provides a method of low-temperature oxidation of a silicon wafer, comprising: placing a silicon wafer in a vacuum chamber; maintaining the silicon wafer at a temperature of between about room temperature and 400 DEG C; introducing an oxidation gas into the vacuum chamber, the oxidation gas being selected from the group of oxidation gases consisting of N2O, NO, O2 and O3; and irradiating the oxidation gas and the silicon wafer with light emitted from an excimer lamp to generate a reactive oxygen species and form an oxide layer on the silicon wafer, including photodissociating the oxidation gas and ejecting photoelectrons from the silicon wafer so that the photoelectrons and the oxidation gas react with each other. |
| priorityDate |
2002-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |