http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200305947-A

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filingDate 2002-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2003-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200305947-A
titleOfInvention Self-aligned contact etch with high sensitivity to nitride shoulder
abstract A method and apparatus are provided for etching semiconductor and dielectric substrates through the use of plasmas based on mixtures of a first gas having the formula CaFb, and a second gas having the formula CxHyFz, where a/b ≥ 2/3, and wherein x/z ≥ 1/2. The mixtures may be used in low or medium density plasmas sustained in a magnetically enhanced reactive ion chamber to provide a process that exhibits excellent comer CD control. The percentages of the first and second gas may be varied during etching to provide a plasma that etches undoped oxide films or to provide an etch stop on such films.
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