http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200304204-A

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
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filingDate 2003-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e0eaa8a54d7f7237fd4e89f780155e1
publicationDate 2003-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200304204-A
titleOfInvention Method of fabricating semiconductor device
abstract A method of fabricating a semiconductor device prevents agglomeration of a seed metal layer in a recess. A recess is formed in a dielectric layer formed on or over a wafer. A seed metal layer (e.g., Cu or Cu alloy) is then formed on a bottom face and an inner side face of the recess. Subsequently, a surface of the seed metal layer is oxidized by exposing the surface of the seed metal layer to an oxygen- containing gas or the atmospheric air before agglomeration of the seed metal layer occurs, thereby forming an oxide layer in the surface of the seed metal layer. A filling metal (e.g., Cu or Cu alloy) is plated on the oxide layer of the seed metal layer while using the seed metal layer whose surface is oxidized as an electrode, thereby filling the recess with the metal.
priorityDate 2002-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 22.