http://rdf.ncbi.nlm.nih.gov/pubchem/patent/MY-147667-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2009-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_559c980c4ab6f5b28c0f481c20b94712 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4971fff44ffafd5e79a4352aaba0a373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42f4c8c3bae6105d2f666241c839bc3c |
| publicationDate | 2012-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | MY-147667-A |
| titleOfInvention | Selective etching of silicon dioxide compositions |
| abstract | 22 SELECTIVE ETCHING OF SILICON DIOXIDE COMPOSITIONS ABSTRACT OF THE DISCLOSURE A PROCESS FOR SELECTIVELY ETCHING A MATERIAL COMPRISING SIO2 OVER SILICON, THE METHOD COMPRISING THE STEPS OF: PLACING A SILICON SUBSTRATE COMPRISING A LAYER OF A 5 MATERIAL COMPRISING SIO2 WITHIN A REACTOR CHAMBER EQUIPPED WITH AN ENERGY SOURCE; CREATING A VACUUM WITHIN THE CHAMBER; INTRODUCING INTO THE REACTOR CHAMBER A REACTIVE GAS MIXTURE COMPRISING A FLUORINE COMPOUND, A POLYMERIZABLE FLUOROCARBON, AND AN INERT GAS, WHEREIN THE REACTIVE GAS MIXTURE IS SUBSTANTIALLY FREE OF ADDED OXYGEN; ACTIVATING THE ENERGY SOURCE TO FORM A PLASMA ACTIVATED REACTIVE ETCHING GAS MIXTURE WITHIN THE -1( CHAMBER; AND SELECTIVELY ETCHING THE MATERIAL COMPRISING SIO2 PREFERENTIALLY TO THE SILICON SUBSTRATE. |
| priorityDate | 2008-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.