http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970077325-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02112 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1996-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970077325-A |
| titleOfInvention | Method for forming interlayer insulating film of semiconductor device |
| abstract | The present invention relates to a method of forming an interlayer insulating film of a semiconductor device and a method of forming an interlayer insulating film of a semiconductor device which flattens a semiconductor element in which a lower structure is formed by a cell portion of a higher stage and a peripheral circuit portion of a lower stage, A second interlayer insulating film as a stopping layer is formed to a predetermined thickness on the first interlayer insulating film, a third interlayer insulating film is formed on the second interlayer insulating film to a predetermined thickness, And the third, second, and first interlayer insulating films are planarized by a CMP process until the second interlayer insulating film formed on the peripheral circuit portion of the lower end is exposed to planarize, thereby preventing the dishing phenomenon unique to the CMP process, The end point detection device is unnecessary, which facilitates the subsequent process and improves the characteristics, reliability and productivity of the semiconductor device, This technology enables high integration of body devices. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100590397-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100865365-B1 |
| priorityDate | 1996-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.