| abstract |
The general method of the present invention provides a polymer cured precursor material piece (such as silicon carbon, silicon carbon or silicon nitride, but preferably silicon) in the reactor chamber during the etching process as fluorine carbide or hydrocarbon-fluorine gas, Heating the polymer cured precursor material phase sufficiently above the polymerization temperature to achieve the desired reduction in silicon etch selectivity to oxide. In general, such polymer cured precursor material or silicone pieces may be integrated portions of the reactor chamber walls and / or ceilings or integrated portions of separate, extensible and quickly removable pieces, and the cooling / cooling device may be It may be in any suitable form including a device for electrically or remotely heating the silicon piece. |