http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970052762-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1995-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970052762-A |
| titleOfInvention | How to reduce foreign substances in dry etching process |
| abstract | The foreign matter reduction method of the dry etching process according to the present invention comprises the steps of forming a high aspect trace contact, depositing a barrier metal to prevent contact between W and Si, CVD W deposition, SF CVD W etch-back process of 6 and N 2 reactant gases, barrier metal etch-back process of Cl 2 , and N 2 reactant gases, and plasma ramping-down process of continuously flowing reactant gas to maintain plasma The RF input voltage of the plasma ramping down process is about 20% or less of the actual etch-back process, and the reaction gas may be any one of SF 6 , Cl 2 , and N 2 during the plasma ramping down process. By mixing two or more gases, Tungsten Etch-Back process reduces foreign matters, which is beneficial to process and device stability and reliability, and helps to maintain equipment. The. |
| priorityDate | 1995-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425762086 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23964 |
Total number of triples: 12.