http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970018196-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1995-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970018196-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device for removing an organic substance remaining in a pattern remaining after a photolithography process in the manufacture of a semiconductor device, wherein the etching target film 12 is formed on a semiconductor substrate 10. and; Forming a photosensitive film (14) having a predetermined pattern on the etching target film (12) by photolithography; A process of removing the organic material remaining between the patterns of the photoresist layer 14 by etching the surface of the etching target layer 12 after the formation of the photoresist layer 14 by plasma etching using a first gas mixture; ; Etching the etch target film (12) using the photosensitive film (14) of the predetermined pattern as a mask by plasma etching using a second gas mixture; And removing the photosensitive film 14. According to the method, since organic residues remaining after the photolithography process for forming a predetermined pattern can be completely removed, it is possible to prevent the generation of residues of the etching target material during the etching process of the etching target film. According to the characteristics of the residue, it is possible to prevent adverse effects on the device characteristics. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100286454-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100425856-B1 |
| priorityDate | 1995-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.