http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970008374-A
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S156-914 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3266 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
filingDate | 1996-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1997-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-970008374-A |
titleOfInvention | Plasma etching apparatus and plasma etching method |
abstract | Provided are a plasma etching apparatus and a plasma etching method that prevent damage to ion incidence and satisfy both of anisotropy and an etching rate.n n n The high permeability material layer 3 is disposed in the substrate stage 2 and the substrate stage 2 is directly dropped to the ground potential. The magnetic force lines (magnetic field lines) due to the divergent magnetic field from the plasma generating source 4 are incident on the substrate stage 2 substantially at right angles.n n n Not only the positive ions in the plasma but also the negative ions are incident perpendicularly on the etched substrate 1 along the lines of magnetic force. Since acceleration of ions by sheath is not used as in the prior art, substrate damage can be effectively prevented. |
priorityDate | 1995-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
---|---|
isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556224 |
Total number of triples: 17.