http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970008374-A

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S156-914
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3266
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
filingDate 1996-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1997-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-970008374-A
titleOfInvention Plasma etching apparatus and plasma etching method
abstract Provided are a plasma etching apparatus and a plasma etching method that prevent damage to ion incidence and satisfy both of anisotropy and an etching rate.n n n The high permeability material layer 3 is disposed in the substrate stage 2 and the substrate stage 2 is directly dropped to the ground potential. The magnetic force lines (magnetic field lines) due to the divergent magnetic field from the plasma generating source 4 are incident on the substrate stage 2 substantially at right angles.n n n Not only the positive ions in the plasma but also the negative ions are incident perpendicularly on the etched substrate 1 along the lines of magnetic force. Since acceleration of ions by sheath is not used as in the prior art, substrate damage can be effectively prevented.
priorityDate 1995-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556224

Total number of triples: 17.