| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-905 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23G5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
1996-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1996-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-960043004-A |
| titleOfInvention |
How to clean the vacuum processor |
| abstract |
According to the cleaning method of the vacuum processing apparatus, the aluminum film formed on the semiconductor substrate and covered by the resist pattern is etched by the gas containing chlorine in the processing chamber of the vacuum processing apparatus and thereafter, the gas containing oxygen group and the gas containing fluorine group. And a plasma of a diluted gas of a mixed gas consisting of a gas containing a chlorine group is generated in a processing chamber to remove residual reaction products. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100531337-B1 |
| priorityDate |
1995-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |