http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-960035858-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1996-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1996-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-960035858-A |
| titleOfInvention | Method for forming tapered openings in silicon |
| abstract | A method for forming a tapered opening on a silicon substrate according to the present invention uses NF 3 and HB r . The NF 3 / HB r plasma etch allows a good taper profile of 85 ° to 60 ° as well as a good etch rate of about 2,500 to 3,000 Å / min. Though not limited to a particular trench size, the method according to the present invention is well suited for forming openings below 0.45 탆. |
| priorityDate | 1995-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 13.