| abstract |
The thin film forming method of the present invention exhausts the film formation chamber containing the semiconductor substrate 1 having the flaw formed on the surface to 10 −4 Torr or less, and then introduces the gases of TiCl 4 , hydrogen, nitrogen and NF 3 into the film formation chamber. Then, these gases are plasma-formed, and the TiN thin film 2 is selectively formed in portions other than the sidewall portion of the flaw. |