http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-950034574-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1995-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1995-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-950034574-A |
| titleOfInvention | Plasma Apparatus And Plasma Treatment Method Using The Same |
| abstract | Placing a helicon plasma generating section and a downstream region ICP generating section in the top region of the process chamber, for plasma excitation common to the loop antenna 2 in the former and the multiturn antenna 11 in the latter. (勵 起用) Source power from the RF power source 19 through the control means. As a result, the plasma treatment is performed by coexisting the helicon plasma P H diffused from the bell jar 1 and the inductively coupled plasma P 1 newly dissociated by the inductively coupled discharge.n n n The ion / radical generation ratio can be controlled and the plasma processing with higher accuracy can be performed. Therefore, when applied to dry etching, the ion assist mechanism can be effectively functioned and favorable high speed anisotropy processing can be performed. |
| priorityDate | 1994-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556224 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244 |
Total number of triples: 16.