http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-950034546-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3346 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3345 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 1995-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1995-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-950034546-A |
| titleOfInvention | Plasma Apparatus And Plasma Treatment Method Using The Same |
| abstract | A plasma apparatus capable of optimally controlling the ion / radical generation ratio of the high-density plasma is constructed to perform high precision etching.n n n A switch 47 is disposed between the solenoid coil 33 that rotates the bell jar 31 and a DC power supply 48 that supplies current thereto, and the switch 47 ) turns oN when there is abundant ion helicon plasma konpa P H, when OFF, the loop antenna (a rich induction (誘導) coupled plasma radical P i by the high frequency electric field here (勵起) to 32) is produced in the. Alternatively, the high frequency current supplied to the loop antenna 32 may be a pulse current having a period of 10 µsec order, and the electron temperature may be lowered while maintaining the plasma density.n n n Since polyatomic ions and polyatomic radicals, which are easily deficient in high-density plasma, are produced at an appropriate ratio, the high-speed anisotropic etching can be performed by smoothly operating the ion assist mechanism. |
| priorityDate | 1994-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.