http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-950009953-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1994-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1995-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-950009953-A |
| titleOfInvention | Dry etching method |
| abstract | The present invention, in the etching process of the film structure, including an aluminum-based film, the film structure of the wafer containing an aluminum-based film is etched by chopping peulrijeu of halogen-based gas and CH 2 F 2 gas mixture. In addition, the wafer having the film structure is placed on a sample stage capable of generating a bias voltage by applying a high frequency power to control the incident energy of ions in the plasma to the wafer, and the mixed gas acts as a microwave electric field and a magnetic field. The present invention provides a dry etching method that can be used to make plasma under reduced pressure, and to be etched by the plasma, thereby etching with fine processing and high selectivity. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010028673-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010062744-A |
| priorityDate | 1993-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.