http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-940016390-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4586 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458 |
| filingDate | 1993-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1994-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-940016390-A |
| titleOfInvention | Mounting table with electrostatic chuck and plasma processing apparatus using the same |
| abstract | The plasma etching apparatus of a semiconductor wafer is provided with the susceptor arrange | positioned in a vacuum processing chamber. The susceptor is provided with an electrostatic chuck for adsorbing and holding the wafer. The electrostatic chuck has a chuck electrode disposed on the susceptor through an insulating layer. The chuck electrode is connected to the positive electrode of the DC power supply via a switch. The chuck electrode is covered by the resistance side, and the wafer is directly placed thereon. The resistive layer has a specific resistance of 1 × 10 10 Pa · cm · 1 × 10 12 Pa · cm in the temperature range during etching. In addition, the resistance layer is set to have a surface roughness in which the centerline average roughness is in the range of 0.1 to 1.5 µm. When the potential of the positive electrode of the direct current power source is applied to the chuck electrode, and the wafer is grounded through the plasma, a contact potential difference occurs between the surface of the resistive layer and the back surface of the wafer, and the electrostatic attraction causes the wafer to adsorb to the resistive layer. maintain. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100783569-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100560643-B1 |
| priorityDate | 1992-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID66227 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559551 |
Total number of triples: 17.