http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-940008021-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1992-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1994-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-940008021-A |
| titleOfInvention | Plasma Reactor and Method Using Electromagnetic High Frequency (RF) Coupling |
| abstract | The plasma reactor chamber is inductively coupled to the reactor dome. The antenna generates a high density, low energy plasma inside the chamber to etch the coral containing layer over the oxygen free layer with high selectivity. The auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and the ion energy independent of density. Various magnetic and voltage process enhancement techniques are described according to other etching processes, deposition processes, and etch / deposition bonding processes. The present invention provides a processing process for sensitive devices that are free of damage or micro loads, thereby improving yield. Oxygen-containing layer etching on the oxygen free layer can be achieved with high selectivity. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200116542-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110117078-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100455951-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100476039-B1 |
| priorityDate | 1992-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.