http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-930021814-A

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filingDate 1993-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1993-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-930021814-A
titleOfInvention Continuous thin film formation method
abstract In the same vacuum vessel, and also by the magnetron sputtering, the uniformity among the film thickness distributions in the substrate of each thin film is obtained when the different thin films are continuously formed by changing the process gas while maintaining the same arrangement in the container. Thin film formation method.n n n An electric field and a magnetic field orthogonal to the space where the target 2 is opposed to the substrate 6 are acted upon, and at the same time, a process gas is introduced to form a plasma, and a thin film containing particles sputtered from the target 2 is applied to the substrate 6. In the magnetron sputtering to be deposited on the surface, the magnetic field forming means (3,14) for acting on the magnetic field is configured so that the magnetic flux density of the opposing space is adjusted, and the composition of the process gas introduced into the vacuum container (1). Therefore, the magnetic flux density is changed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101414812-B1
priorityDate 1992-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.