Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-332 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505 |
filingDate |
2021-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f2cc51f9c80f31fd04ae40dab9d5c50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a99461710665b8802ed02538fe8f0a1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fc0f46118681133d566de6893e7733c |
publicationDate |
2022-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20220081905-A |
titleOfInvention |
Silicon precursors for silicon silicon nitride deposition |
abstract |
The present disclosure relates to a vapor deposition assembly for depositing silicon nitride on a substrate by a plasma enhanced periodic deposition process. The present disclosure also relates to a method of depositing silicon nitride on a substrate by a plasma enhanced periodic deposition process. The method comprises the steps of providing a substrate in a reaction chamber, providing a silicon vapor precursor according to formula sih3x (x is iodine or bromine) into the reaction chamber, removing excess silicon precursor and possible reaction byproducts from the reaction chamber; and providing reactive species generated from the nitrogen containing plasma into the reaction chamber to form silicon nitride on the substrate. The present disclosure also relates to structures and devices formed by the method. |
priorityDate |
2020-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |