| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c10320b05f723976a898536f012b60c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32779
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32899
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45551
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2021-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5819db09279f229285eccbcdd1ea39a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8802b46aeb854389ffe857282678f93f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91ace6c53fefe6d1ee98c6258dd599cf |
| publicationDate |
2022-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20220016002-A |
| titleOfInvention |
Systems and methods for improving planarity using selective atomic layer etching (ale) |
| abstract |
A method is provided for planarizing a patterned substrate in a spatial atomic layer processing system including a rotating platen. A patterned substrate may generally include features having higher areas and lower areas. To planarize the patterned substrate, or to reduce the height difference between the higher and lower regions, the surface of the patterned substrate is exposed to a precursor gas while the rotating platen rotates at a high rotational speed to further increase the height of the features. A selective atomic layer etching (ALE) process for desirably forming a modified layer on a high area is disclosed. By preferably forming a modification layer over the higher regions of the feature, and subsequently removing the modification layer, the selective ALE process described herein can be applied to the higher regions of the feature until the desired planarization of the feature is achieved. Etching preferably reduces the difference in height between the higher and lower regions of the one or more features. |
| priorityDate |
2020-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |