Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-332 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45561 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2021-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e38d85fe00c74ef6b1a2167a271e18d2 |
publicationDate |
2022-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20220013924-A |
titleOfInvention |
Thin film deposition process |
abstract |
Provided is a thin film deposition process capable of controlling the distribution on a plane of a thin film deposited on a substrate with high precision. This process is a process of depositing a thin film on a substrate in a chamber by atomic layer deposition (ALD), which includes repeating a deposition cycle of depositing a thin film on the substrate. The deposition cycle includes supplying a reaction gas and a carrier gas to the chamber and supplying the source gas at a low concentration to the chamber such that the source gas is absorbed by the substrate; supplying a reaction gas and a carrier gas to the chamber to purge the reaction gas not absorbed by the substrate from the chamber; supplying RF power to the chamber to convert the reactive gas into plasma so that the source gas activated by the plasma contacts the surface of the substrate; and providing a reactant gas and a carrier gas to the chamber to purge residual unreacted source gas and reactant gas from the chamber. |
priorityDate |
2020-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |