| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5351c62aee4203f2be2944f21a6def2 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 |
| filingDate |
2020-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_419e4f097ea6cddc9980ca430adab841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb997ac4c31ce188fd72d4f4014affba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2023fc9d0f3e347c88ba7fc08561685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fea093ed1fb7d90a8e0a4fa11d49db4f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e78838a0c4bffabe53bf2f73dcef922d |
| publicationDate |
2022-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20220012632-A |
| titleOfInvention |
Method for improving electric property of metal oxide thin film |
| abstract |
The present embodiments are a method of improving ILD (Inter-Layer Dielectric) characteristics by reducing the dielectric constant of a metal oxide thin film through reduction of hydroxyl group impurities formed in a metal oxide thin film implemented by atomic layer deposition (ALD). and a semiconductor device. |
| priorityDate |
2020-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |