| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2020-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_391adf31d6aa1a067e1e82cdc61b6d93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55a0fb1e612495bd35b5275c3cb4783e |
| publicationDate |
2021-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210150946-A |
| titleOfInvention |
Integrated circuit devices including an element having a non-linear shaped upper surface and methods of forming the same |
| abstract |
An integrated circuit device and a method of forming the same are provided. The method includes sequentially forming a lower mask layer and a preliminary first mask layer on a substrate, removing a portion of the preliminary first mask layer to form a first mask structure, and then forming a second preliminary mask layer may include forming. The preliminary second mask layer may surround the first mask structure in a plan view. The method also includes forming a second mask structure by removing a portion of the preliminary second mask layer and forming a vertical channel region comprising a portion of the substrate by sequentially etching the lower mask layer and the substrate. may include The second mask structure may be connected to the first mask structure, and the etching of the lower mask layer may be performed using the first and second mask structures as etch masks. |
| priorityDate |
2020-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |