| abstract |
The method includes a substrate, a fin, source/drain (S/D) features, an isolation structure adjacent to sidewalls of the fin, one or more channel layers over the first dielectric layer and connecting the S/D features, and one or more and providing a structure having a gate structure that engages the channel layers. The method further comprises thinning the structure from the backside until the fin is exposed, and selectively etching the fin to form a trench exposing the surfaces of the S/D features, the first dielectric layer, and the isolation structure. include The method includes forming a silicide feature on the S/D features, depositing an inhibitor on the silicide feature, but not on the surface of the first dielectric layer and the isolation structure, the isolation structure and the surface of the first dielectric layer but not on the inhibitor depositing a dielectric liner layer on the poles, and selectively removing the inhibitor. |