| abstract |
According to embodiments of the present invention, a semiconductor device may include a semiconductor substrate; an under bump pattern disposed on the semiconductor substrate and including a first metal; a bump pattern on the under bump pattern; and an organic insulating layer disposed on the semiconductor substrate and in contact with a sidewall of the bump pattern. the bump pattern may be in contact with the under bump pattern and may include a support pattern having a first width; and a solder pillar pattern disposed on the support pattern and having a second width, wherein the first width is greater than the second width, and the support pattern includes a solder material and an intermetallic compound (IMC). and at least one of them, and the intermetallic compound may include an intermetallic compound of the first metal and a solder material. |