| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9df3ec32d0360c7eb1069a933144c63e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2020-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af0b46ae8b4efddcb10e78b62e2d6bdd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cde12b8312fb4c1295ca2074f215fac8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cf9e161899e2cad90204b7147403c2a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb0dfe72712dd20f5197c9ce2b27c468 |
| publicationDate |
2021-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210123908-A |
| titleOfInvention |
Thermal annealing Apparatus for gate oxides on SiC by using microwave excited plasma |
| abstract |
The present invention relates to a method and apparatus for forming a nitrided oxide film on a SiC substrate. The present invention provides a SiC substrate in a chamber; introducing a mixed gas of nitrogen and oxygen or a gas containing air into the chamber; generating plasma by exciting the introduced gas with microwaves; and exposing the SiC substrate to the activated species of the plasma to form an oxide film on the surface of the SiC substrate. |
| priorityDate |
2020-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |