| abstract |
An apparatus and method for processing a substrate using plasma, which have high plasma stability and process reproducibility, are provided. The substrate processing method provides a substrate processing apparatus including a plasma generating region and a process region separated from the plasma generating region, wherein a substrate including a silicon layer and an oxide layer is disposed in the process region, the plasma generating region A hydrogen-based gas is provided to the process region without passing through the region to form a hydrogen atmosphere, a fluorine-based gas is provided to the plasma generating region to generate plasma, and the generated plasma is provided to the process region, , and selectively removing the silicon layer compared to the oxide layer. |